BSZ050N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.1W

Turn-Off Delay Time :

26 ns

Number of Terminations :

5

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N5

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Series :

OptiMOS™

Transistor Application :

SWITCHING

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

40A

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 10V

Turn On Delay Time :

6.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Published :

2009

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0057Ohm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

30V

Pbfree Code :

No

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

8

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

70 mJ

Terminal Finish :

Tin (Sn)

Factory Lead Time :

18 Weeks

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Terminal Position :

Dual

Mount :

Surface Mount

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Rise Time :

4.2ns

Case Connection :

DRAIN

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Ta 40A Tc

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

15A

Power Dissipation-Max :

2.1W Ta 48W Tc

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

3.2 ns

Packaging :

Tape and Reel (TR)