BSZ050N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Published :

2005

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

40A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

No

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Case Connection :

DRAIN

Contact Plating :

Tin

Transistor Application :

SWITCHING

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

JESD-30 Code :

R-PDSO-N5

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Max Dual Supply Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Terminal Form :

NO LEAD

Power Dissipation-Max :

2.1W Ta 50W Tc

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 40A Tc

Number of Pins :

8

Number of Elements :

1

Power Dissipation :

50W

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Continuous Drain Current (ID) :

16A

Rise Time :

4ns

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

70 mJ