BSZ042N04NS
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- Mfr.Part #
- BSZ042N04NS
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 8,289
- In Stock ：
- 8,289
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 3.4ns
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 36μA
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Fall Time (Typ) :
- 4.2 ns
- Terminal Form :
- NO LEAD
- Number of Terminations :
- 5
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-PowerVDFN
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 20A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 20 ns
- Turn On Delay Time :
- 14 ns
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Power Dissipation :
- 69W
- Series :
- OptiMOS™
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 40A
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Power Dissipation-Max :
- 2.1W Ta 69W Tc
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 160A
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 20V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-N5
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Lead Free :
- Contains Lead
- Datasheets
- BSZ042N04NS
N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 3700pF @ 20V 46nC @ 10V 8-PowerVDFN
BSZ042N04NSGATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3700pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 160A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BSZ042N04NSGATMA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 20 ns
based on its rated peak drain current 160A.
BSZ042N04NSGATMA1 Applications
There are a lot of Infineon Technologies
BSZ042N04NSGATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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