BSZ042N04NS
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- Mfr.Part #
- BSZ042N04NS
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 8,289
- In Stock ：
- 8,289
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Power Dissipation-Max :
- 2.1W Ta 69W Tc
- Drain-source On Resistance-Max :
- 0.0042Ohm
- Pin Count :
- 8
- Fall Time (Typ) :
- 4.2 ns
- Power Dissipation :
- 69W
- Continuous Drain Current (ID) :
- 40A
- Rise Time :
- 3.4ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 18 Weeks
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.2m Ω @ 20A, 10V
- Turn On Delay Time :
- 14 ns
- Turn-Off Delay Time :
- 20 ns
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 36μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Max Dual Supply Voltage :
- 40V
- Package / Case :
- 8-PowerVDFN
- Pulsed Drain Current-Max (IDM) :
- 160A
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3700pF @ 20V
- JESD-30 Code :
- R-PDSO-N5
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Published :
- 2003
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- NO LEAD
- Terminal Position :
- Dual
- Additional Feature :
- AVALANCHE RATED, HIGH VOLTAGE
- Series :
- OptiMOS™
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 5
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Datasheets
- BSZ042N04NS
N-Channel Tape & Reel (TR) 4.2m Ω @ 20A, 10V ±20V 3700pF @ 20V 46nC @ 10V 8-PowerVDFN
BSZ042N04NSGATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3700pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 160A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BSZ042N04NSGATMA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 40A
the turn-off delay time is 20 ns
based on its rated peak drain current 160A.
BSZ042N04NSGATMA1 Applications
There are a lot of Infineon Technologies
BSZ042N04NSGATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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