BSZ036NE2LSATMA1

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Mfr.Part #
BSZ036NE2LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 16A/40A TSDSON
Stock
11,741
In Stock :
11,741

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
16A Ta 40A Tc
Turn On Delay Time :
3.3 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
3.6m Ω @ 20A, 10V
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Max Dual Supply Voltage :
25V
Published :
2013
Terminal Form :
NO LEAD
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Additional Feature :
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 12V
Packaging :
Tape and Reel (TR)
Rise Time :
2.8ns
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
40 mJ
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PDSO-N3
Power Dissipation-Max :
2.1W Ta 37W Tc
Continuous Drain Current (ID) :
16A
Factory Lead Time :
18 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Pbfree Code :
No
Number of Terminations :
3
Power Dissipation :
2.1W
Threshold Voltage :
2V
ECCN Code :
EAR99
Pin Count :
8
Halogen Free :
Halogen Free
Package / Case :
8-PowerTDFN
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Series :
OptiMOS™
FET Type :
N-Channel
Turn-Off Delay Time :
15 ns
Lead Free :
Contains Lead
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
2V @ 250μA
Fall Time (Typ) :
2.2 ns
Mount :
Surface Mount
Number of Pins :
8
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BSZ036NE2LSATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSZ036NE2LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Pins:8, BSZ036NE2LSATMA1 pinout, BSZ036NE2LSATMA1 datasheet PDF, BSZ036NE2LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSZ036NE2LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSZ036NE2LSATMA1


N-Channel Tape & Reel (TR) 3.6m Ω @ 20A, 10V ±20V 1200pF @ 12V 16nC @ 10V 8-PowerTDFN

Description


The BSZ036NE2LSATMA1 is an OptiMOSTM Power-MOSFET. Infineon establishes new benchmarks in power density and energy efficiency for discrete power MOSFETs and systems in packages with the OptiMOSTM 25V product family. For the demanding needs of voltage regulator solutions in servers, datacom, and telecom applications, OptiMOSTM 25V is the optimum option because of its extremely low gate and output charge, lowest on-state resistance, and small footprint packages, readily available in half-bridge form (power stage 5x6).



Features


  • N-channel

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant

  • Halogen-free according to IEC61249-2-21

  • Excellent gate charge x R DS(on) product (FOM)

  • Very low on-resistance R DS(on) @ V GS=4.5 V

  • 100% avalanche tested

  • Superior thermal resistance

  • Optimized for high-performance Buck converter (Server, VGA)

  • Very Low FOMQOSS for High-Frequency SMPS

  • Low FOMSW for High-Frequency SMPS



Applications


  • DC-DC

  • VRD/VRM

  • LED

  • Motor control

  • Onboard charger

  • Mainboard

  • Notebook


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