BSZ036NE2LSATMA1
- Mfr.Part #
- BSZ036NE2LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 16A/40A TSDSON
- Stock
- 11,741
- In Stock :
- 11,741
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 40A Tc
- Turn On Delay Time :
- 3.3 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 20A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 25V
- Published :
- 2013
- Terminal Form :
- NO LEAD
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 12V
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 2.8ns
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PDSO-N3
- Power Dissipation-Max :
- 2.1W Ta 37W Tc
- Continuous Drain Current (ID) :
- 16A
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Power Dissipation :
- 2.1W
- Threshold Voltage :
- 2V
- ECCN Code :
- EAR99
- Pin Count :
- 8
- Halogen Free :
- Halogen Free
- Package / Case :
- 8-PowerTDFN
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Series :
- OptiMOS™
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 15 ns
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Fall Time (Typ) :
- 2.2 ns
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSZ036NE2LSATMA1

N-Channel Tape & Reel (TR) 3.6m Ω @ 20A, 10V ±20V 1200pF @ 12V 16nC @ 10V 8-PowerTDFN
Description
The BSZ036NE2LSATMA1 is an OptiMOSTM Power-MOSFET. Infineon establishes new benchmarks in power density and energy efficiency for discrete power MOSFETs and systems in packages with the OptiMOSTM 25V product family. For the demanding needs of voltage regulator solutions in servers, datacom, and telecom applications, OptiMOSTM 25V is the optimum option because of its extremely low gate and output charge, lowest on-state resistance, and small footprint packages, readily available in half-bridge form (power stage 5x6).
Features
-
N-channel
-
Qualified according to JEDEC1) for target applications
-
Pb-free lead plating; RoHS compliant
-
Halogen-free according to IEC61249-2-21
-
Excellent gate charge x R DS(on) product (FOM)
-
Very low on-resistance R DS(on) @ V GS=4.5 V
-
100% avalanche tested
-
Superior thermal resistance
-
Optimized for high-performance Buck converter (Server, VGA)
-
Very Low FOMQOSS for High-Frequency SMPS
-
Low FOMSW for High-Frequency SMPS
Applications
-
DC-DC
-
VRD/VRM
-
LED
-
Motor control
-
Onboard charger
-
Mainboard
-
Notebook
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