BSZ033NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

S-PDSO-N3

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Terminal Form :

NO LEAD

Drain-source On Resistance-Max :

0.0041Ohm

Lead Free :

Contains Lead

Power Dissipation-Max :

2.1W Ta 30W Tc

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 20A, 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

18A Ta 40A Tc

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

20 mJ

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 12V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

160A

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

Published :

2013

Pbfree Code :

yes

Terminal Position :

Dual

Number of Pins :

8

Continuous Drain Current (ID) :

40A

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C~150°C TJ