BSP62H6327XTSA1
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- Mfr.Part #
- BSP62H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1A SOT223-4
- Stock
- 159,417
- In Stock ：
- 159,417
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP - Darlington
- Current - Collector Cutoff (Max) :
- 10μA
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Power - Max :
- 1.5W
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Transition Frequency :
- 200MHz
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 1.8V
- hFE Min :
- 1000
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.5W
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Base Part Number :
- BSP62
- Published :
- 2007
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Width :
- 3.5mm
- Factory Lead Time :
- 12 Weeks
- Collector Base Voltage (VCBO) :
- 90V
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.6mm
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity :
- PNP
- Transistor Element Material :
- SILICON
- Length :
- 6.5mm
- Frequency - Transition :
- 200MHz
- Datasheets
- BSP62H6327XTSA1
PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP62H6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 2000 @ 500mA 10V.With a collector emitter saturation voltage of 1.8V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.8V @ 1mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BSP62H6327XTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP62H6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP62H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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