BSP60E6327HTSA1
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- Mfr.Part #
- BSP60E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 45V 1A SOT223-4
- Stock
- 41,001
- In Stock ：
- 41,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP - Darlington
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 10μA
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.8V
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Power - Max :
- 1.5W
- Frequency - Transition :
- 200MHz
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Published :
- 2011
- Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Base Part Number :
- BSP60
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- hFE Min :
- 2000
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- RoHS Status :
- RoHS Compliant
- Datasheets
- BSP60E6327HTSA1
PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP60E6327HTSA1 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.8V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.8V @ 1mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BSP60E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
BSP60E6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP60E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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