BSP603S2LHUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

33m Ω @ 2.6A, 10V

Voltage - Rated DC :

55V

Rise Time :

16ns

Vgs(th) (Max) @ Id :

2V @ 50μA

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Halogen Free :

Not Halogen Free

Turn-Off Delay Time :

28 ns

Input Capacitance (Ciss) (Max) @ Vds :

1390pF @ 25V

Current Rating :

5.2A

Power Dissipation-Max :

1.8W Ta

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Mount :

Surface Mount

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Published :

2008

Power Dissipation :

1.8W

Pin Count :

4

Mounting Type :

Surface Mount

Length :

6.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10.8 ns

Case Connection :

DRAIN

Fall Time (Typ) :

16 ns

Number of Terminations :

4

Height :

1.6mm

Series :

OptiMOS™

Width :

3.5mm

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

55V

Drain to Source Breakdown Voltage :

55V

Continuous Drain Current (ID) :

5.2A

Pbfree Code :

yes

Contact Plating :

Tin

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V