BSP613PL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

P-Channel

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Rise Time :

9 ns

Product Status :

Active

Package Shape :

RECTANGULAR

Voltage Rating (DC) :

-60 V

Reach Compliance Code :

Compliant

Max Power Dissipation :

1.8 W

Max Operating Temperature :

150 °C

Lead Free :

Lead Free

Mount :

Surface Mount

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.13 Ω

Pbfree Code :

yes

Subcategory :

Other Transistors

Number of Pins :

4

Pulsed Drain Current-Max (IDM) :

11.6 A

Input Capacitance :

875 pF

Min Operating Temperature :

-55 °C

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Number of Elements :

1

Continuous Drain Current (ID) :

2.9 A

Threshold Voltage :

-3 V

Current Rating :

-2.9 A

Avalanche Energy Rating (Eas) :

150 mJ

Drain to Source Voltage (Vdss) :

60 V

Nominal Vgs :

-3 V

Turn-Off Delay Time :

26 ns

Manufacturer :

Infineon Technologies AG

HTS Code :

8541.29.00.95

Turn-On Delay Time :

6.7 ns

Power Dissipation-Max (Abs) :

1.8 W

Drain Current-Max (Abs) (ID) :

2.9 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20 V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Package :

Bulk

Drain to Source Resistance :

130 mΩ

Rds On Max :

130 mΩ

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

DS Breakdown Voltage-Min :

60 V

Power Dissipation :

1.8 W

Drain to Source Breakdown Voltage :

60 V

Pin Count :

4

RoHS :

Compliant

Number of Terminals :

4

Terminal Position :

Dual

Transistor Element Material :

SILICON

Series :

*