BSP613P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

130m Ω @ 2.9A, 10V

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

HTS Code :

8541.29.00.95

Published :

2003

JESD-30 Code :

R-PDSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

875pF @ 25V

Avalanche Energy Rating (Eas) :

150 mJ

FET Type :

P-Channel

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.13Ohm

Pulsed Drain Current-Max (IDM) :

11.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

2.9A

Power Dissipation-Max :

1.8W Ta

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Terminations :

4

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Series :

SIPMOS®

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99