BSP615S2L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

90m Ω @ 1.4A, 10V

Current Rating :

2.8A

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Lead Free :

Contains Lead

Mount :

Surface Mount

JESD-609 Code :

e3

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

2.8A

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Published :

2003

Power Dissipation-Max :

1.8W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

Pin Count :

4

Voltage - Rated DC :

55V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.8W

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 12μA

Number of Elements :

1