BSP62E6327HTSA1

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Mfr.Part #
BSP62E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP DARL 80V 1A SOT223-4
Stock
147,802
In Stock :
147,802

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) :
80V
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Terminal Position :
Dual
Published :
2011
Packaging :
Tape and Reel (TR)
Current - Collector (Ic) (Max) :
1A
JESD-30 Code :
R-PDSO-G4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Terminal Form :
Gull wing
Number of Terminations :
4
Reach Compliance Code :
Compliant
Transistor Type :
PNP - Darlington
Case Connection :
COLLECTOR
Transition Frequency :
200MHz
Number of Elements :
1
Pin Count :
4
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
10μA
Operating Temperature :
150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Polarity/Channel Type :
PNP
Base Part Number :
BSP62
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Power - Max :
1.5W
Reference Standard :
AEC-Q101
Frequency - Transition :
200MHz
ECCN Code :
EAR99
Pbfree Code :
yes
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package / Case :
TO-261-4, TO-261AA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
BSP62E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BSP62E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:BSP62, Package / Case:TO-261-4, TO-261AA, BSP62E6327HTSA1 pinout, BSP62E6327HTSA1 datasheet PDF, BSP62E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BSP62E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP62E6327HTSA1


PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP62E6327HTSA1 Overview


In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BSP62E6327HTSA1 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz


BSP62E6327HTSA1 Applications


There are a lot of Infineon Technologies
BSP62E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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