BSP62E6327HTSA1
- Mfr.Part #
- BSP62E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1A SOT223-4
- Stock
- 147,802
- In Stock :
- 147,802
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- RoHS Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Terminal Position :
- Dual
- Published :
- 2011
- Packaging :
- Tape and Reel (TR)
- Current - Collector (Ic) (Max) :
- 1A
- JESD-30 Code :
- R-PDSO-G4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Reach Compliance Code :
- Compliant
- Transistor Type :
- PNP - Darlington
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Polarity/Channel Type :
- PNP
- Base Part Number :
- BSP62
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Power - Max :
- 1.5W
- Reference Standard :
- AEC-Q101
- Frequency - Transition :
- 200MHz
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BSP62E6327HTSA1

PNP - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP62E6327HTSA1 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BSP62E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz
BSP62E6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP62E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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