BSP62,115
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- Mfr.Part #
- BSP62,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1A SOT223
- Stock
- 4,636
- In Stock ：
- 4,636
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G4
- Base Part Number :
- BSP62
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP - Darlington
- ECCN Code :
- EAR99
- Frequency - Transition :
- 200MHz
- Current - Collector (Ic) (Max) :
- 1A
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.25W
- Polarity :
- PNP
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Datasheets
- BSP62,115
PNP - Darlington 150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP62,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.When VCE saturation is 1.3V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.
BSP62,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BSP62,115 Applications
There are a lot of Nexperia USA Inc.
BSP62,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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