BSP299L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

400 pF

Drain-source On Resistance-Max :

4 Ω

Nominal Vgs :

3 V

Turn-On Delay Time :

8 ns

Power Dissipation-Max (Abs) :

1.8 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.8 W

Peak Reflow Temperature (Cel) :

260

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G4

HTS Code :

8541.29.00.95

Terminal Position :

Dual

Threshold Voltage :

3 V

Voltage Rating (DC) :

500 V

Package :

Bulk

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20 V

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Number of Elements :

1

Continuous Drain Current (ID) :

400 mA

Drain Current-Max (Abs) (ID) :

0.4 A

Rds On Max :

4 Ω

Rise Time :

15 ns

Dual Supply Voltage :

500 V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Manufacturer :

Infineon Technologies AG

Number of Pins :

4

Subcategory :

FET General Purpose Power

Drain to Source Resistance :

3.1 Ω

Operating Mode :

ENHANCEMENT MODE

Current Rating :

400 mA

Product Status :

Active

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

1.6 A

Manufacturer Package Identifier :

PG-SOT223-4

Max Junction Temperature (Tj) :

150 °C

Termination :

SMD/SMT

Width :

6.7 mm

Min Operating Temperature :

-55 °C

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

500 V

Drain to Source Breakdown Voltage :

500 V

Power Dissipation :

1.8 W

JESD-609 Code :

e3

Number of Terminals :

4

RoHS :

Compliant

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Height :

1.8 mm

Max Operating Temperature :

150 °C

Reach Compliance Code :

Compliant

Pin Count :

4

DS Breakdown Voltage-Min :

500 V

Turn-Off Delay Time :

55 ns

Qualification Status :

Not Qualified

Series :

*

Mount :

Surface Mount, Through Hole

Avalanche Energy Rating (Eas) :

130 mJ