BSP254A,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.2A

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Power Dissipation-Max :

1W Ta

Packaging :

Tape and Reel (TR)

JESD-30 Code :

O-PBCY-T3

Surface Mount :

No

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Operating Temperature :

150°C TJ

Terminal Finish :

Tin

Feedback Cap-Max (Crss) :

15 pF

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Published :

1998

FET Type :

P-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

250V

Qualification Status :

Not Qualified

Vgs (Max) :

20V

Rds On (Max) @ Id, Vgs :

15 Ω @ 200mA, 10V

DS Breakdown Voltage-Min :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED