BSP296E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

1.79W Ta

RoHS Status :

Non-RoHS Compliant

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 25V

Power Dissipation :

1.79W

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

1A

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Continuous Drain Current (ID) :

1.1A

Fall Time (Typ) :

21.4 ns

Current Rating :

1A

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Voltage - Rated DC :

100V

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Rise Time :

7.9ns

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Turn-Off Delay Time :

37.4 ns

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE