BSP295E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

300 mΩ

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Input Capacitance (Ciss) (Max) @ Vds :

368pF @ 25V

Max Operating Temperature :

150°C

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

4

FET Type :

N-Channel

Input Capacitance :

368pF

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Series :

SIPMOS®

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Lead Free :

Contains Lead

Rise Time :

20ns

Mount :

Surface Mount

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Published :

2001

Current Rating :

1.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

1.8A

Supplier Device Package :

PG-SOT223-4

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

300mOhm @ 1.8A, 10V