BSP220,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1998

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.5W Ta

DS Breakdown Voltage-Min :

200V

Continuous Drain Current (ID) :

-225mA

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

225mA Ta

Surface Mount :

yes

Operating Temperature :

150°C TJ

Drain Current-Max (Abs) (ID) :

0.225A

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Pin Count :

4

Number of Pins :

4

Terminal Position :

Dual

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 25V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

15 pF

Vgs(th) (Max) @ Id :

2.8V @ 1mA

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3