BSP250,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

4 Weeks

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

-30V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

12A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.65W Ta

Radiation Hardening :

No

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Resistance :

250mOhm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Case Connection :

DRAIN

Lead Free :

Lead Free

Package / Case :

TO-261-4, TO-261AA

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation :

1.65W

Continuous Drain Current (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Published :

1998

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Contact Plating :

Tin

Operating Temperature :

150°C TJ

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Pin Count :

4

Number of Pins :

4

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 20V

Drain Current-Max (Abs) (ID) :

3A

Transistor Element Material :

SILICON

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30