BSP295L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

1.8 W

Terminal Position :

Dual

DS Breakdown Voltage-Min :

60 V

Series :

SIPMOS®

Number of Terminals :

4

Drain Current-Max (Abs) (ID) :

1.8 A

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 10 V

Continuous Drain Current Id :

1.8

Input Capacitance (Ciss) (Max) @ Vds :

368 pF @ 25 V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-261-4, TO-261AA

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Surface Mount :

yes

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

300mOhm @ 1.8A, 10V

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

HTS Code :

8541.29.00.95

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Pin Count :

4

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

7.2 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

PG-SOT223-4-21

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.5 Ω

Polarity/Channel Type :

N-Channel

Package :

Bulk

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

60 V

JESD-30 Code :

R-PDSO-G4

FET Feature :

-

Subcategory :

FET General Purpose Power

Power Dissipation (Max) :

1.8W (Ta)

Channel Type :

N

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Manufacturer :

Infineon Technologies AG