BSP295H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Width :

3.5mm

Threshold Voltage :

1.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

SIPMOS®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

7.2A

Rise Time :

9.9ns

Turn On Delay Time :

5.4 ns

Packaging :

Cut Tape (CT)

Height :

1.6mm

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Contact Plating :

Tin

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.8A, 10V

Termination :

SMD/SMT

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Number of Pins :

3

Halogen Free :

Halogen Free

Package / Case :

TO-261-4, TO-261AA

Length :

6.5mm

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

4

Turn-Off Delay Time :

27 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Nominal Vgs :

1.1 V

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

1.8A

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.5Ohm

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Max Dual Supply Voltage :

60V

Power Dissipation :

1.5W

ECCN Code :

EAR99

Power Dissipation-Max :

1.8W Ta

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

368pF @ 25V

Element Configuration :

Single

Pin Count :

4

Published :

2001

JESD-30 Code :

R-PDSO-G4

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Dual Supply Voltage :

60V

Fall Time (Typ) :

19 ns

FET Type :

N-Channel