BSP299 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 10V

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

1.6A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Series :

SIPMOS®

JESD-30 Code :

R-PDSO-G4

Published :

2007

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Number of Terminations :

4

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

0.4A

Peak Reflow Temperature (Cel) :

255

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

500V

Avalanche Energy Rating (Eas) :

130 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

4Ohm

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-261-4, TO-261AA