BSP298 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

2A

Peak Reflow Temperature (Cel) :

255

Drain Current-Max (Abs) (ID) :

0.5A

HTS Code :

8541.29.00.95

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

130 mJ

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Package / Case :

TO-261-4, TO-261AA

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED

Number of Terminations :

4

Series :

SIPMOS®

Drain-source On Resistance-Max :

3Ohm

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Power Dissipation-Max :

1.8W Ta

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

400V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

400V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2007

Terminal Position :

Dual

Transistor Element Material :

SILICON

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Vgs (Max) :

±20V

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30