BSP297L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

0.66 A

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

2.64 A

Mounting Type :

Surface Mount

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Manufacturer :

Infineon Technologies AG

Gate Charge (Qg) (Max) @ Vgs :

16.1 nC @ 10 V

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Power Dissipation-Max (Abs) :

1.8 W

Rds On (Max) @ Id, Vgs :

1.8Ohm @ 660mA, 10V

Surface Mount :

yes

DS Breakdown Voltage-Min :

200 V

Package :

Bulk

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

200 V

Supplier Device Package :

PG-SOT223-4-21

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

357 pF @ 25 V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G4

Terminal Finish :

Matte Tin (Sn)

Product Status :

Active

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

4

Pin Count :

4

Drain-source On Resistance-Max :

1.8 Ω

Reach Compliance Code :

Compliant

Subcategory :

FET General Purpose Power

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

660mA (Ta)

JESD-609 Code :

e3

Power Dissipation (Max) :

1.8W (Ta)

Case Connection :

DRAIN

FET Feature :

-

Series :

SIPMOS®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

ECCN Code :

EAR99

Technology :

MOSFET (Metal Oxide)