BSP297 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.8W Ta

Input Capacitance (Ciss) (Max) @ Vds :

357pF @ 25V

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

HTS Code :

8541.29.00.75

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

JESD-30 Code :

R-PDSO-G4

Case Connection :

DRAIN

Number of Elements :

1

Published :

2007

Drain Current-Max (Abs) (ID) :

0.66A

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Surface Mount :

yes

Vgs (Max) :

±20V

Series :

SIPMOS®

Gate Charge (Qg) (Max) @ Vgs :

16.1nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

660mA Ta

Pulsed Drain Current-Max (IDM) :

2.64A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 660mA, 10V

Mounting Type :

Surface Mount

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE