BSP296NH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED; LOGIC LEVEL COMPATIBLE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

1.8W Ta

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1.8V @ 100μA

Number of Channels :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Rise Time :

3.8ns

Mount :

Surface Mount

Published :

2013

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Pbfree Code :

yes

Contact Plating :

Tin

Drain-source On Resistance-Max :

0.6Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.2A, 10V

Number of Pins :

4

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.2A

ECCN Code :

EAR99

Weight :

250.212891mg

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

152.7pF @ 25V

Case Connection :

DRAIN