BSP296L6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G4

Package / Case :

TO-261-4, TO-261AA

Subcategory :

FET General Purpose Power

DS Breakdown Voltage-Min :

100 V

Vgs(th) (Max) @ Id :

1.8V @ 400µA

Drain-source On Resistance-Max :

0.7 Ω

Technology :

MOSFET (Metal Oxide)

FET Feature :

-

Drain to Source Voltage (Vdss) :

100 V

Surface Mount :

yes

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

364 pF @ 25 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Channel Type :

N

Case Connection :

DRAIN

Package :

Bulk

Polarity/Channel Type :

N-Channel

Manufacturer :

Infineon Technologies AG

Gate Charge (Qg) (Max) @ Vgs :

17.2 nC @ 10 V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

700mOhm @ 1.1A, 10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

1.79 W

Number of Terminals :

4

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

4.4 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

MATTE TIN

Continuous Drain Current Id :

1.1

Product Status :

Active

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1.1 A

Package Shape :

RECTANGULAR

Reach Compliance Code :

Compliant

Terminal Position :

Dual

Series :

SIPMOS®

Supplier Device Package :

PG-SOT223

Power Dissipation (Max) :

1.79W (Ta)

Current - Continuous Drain (Id) @ 25°C :

1.1A (Ta)

Transistor Element Material :

SILICON