BSP296L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

100V

Mount :

Surface Mount

Power Dissipation :

1.79W

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Terminal Form :

Gull wing

Series :

SIPMOS®

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

7.9ns

Drain-source On Resistance-Max :

0.7Ohm

Vgs(th) (Max) @ Id :

1.8V @ 400µA

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 25V

Fall Time (Typ) :

21.4 ns

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.1A, 10V

JESD-609 Code :

e3

Number of Terminations :

4

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Packaging :

Tape and Reel (TR)

Published :

2002

Number of Pins :

4

Terminal Position :

Dual

Turn On Delay Time :

5.2 ns

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Radiation Hardening :

No

Continuous Drain Current (ID) :

1.1A

Power Dissipation-Max :

1.79W Ta

Turn-Off Delay Time :

37.4 ns