BSO211PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Turn On Delay Time :

7.8 ns

Turn-Off Delay Time :

26.3 ns

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.7A, 4.5V

Rise Time :

10.6ns

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Vgs(th) (Max) @ Id :

1.2V @ 25µA

Base Part Number :

BSO211

Gate Charge (Qg) (Max) @ Vgs :

23.9nC @ 4.5V

Number of Terminations :

8

Number of Elements :

2

Fall Time (Typ) :

23.3 ns

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 15V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

FET Type :

2 P-Channel (Dual)

Continuous Drain Current (ID) :

4.7A

Published :

2002

Max Power Dissipation :

2W

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.067Ohm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount