BSO211P
- Mfr.Part #
- BSO211P
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- P-CHANNEL POWER MOSFET
- Stock
- 20,000
- In Stock :
- 20,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate to Source Voltage (Vgs) :
- 12 V
- Pin Count :
- 8
- Terminal Finish :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 4.7 A
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Pbfree Code :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 67mOhm @ 4.7A, 4.5V
- Power - Max :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 23.9nC @ 4.5V
- Mounting Type :
- Surface Mount
- Turn-On Delay Time :
- 7.8 ns
- FET Feature :
- Logic Level Gate
- Surface Mount :
- yes
- Package Shape :
- RECTANGULAR
- Channel Type :
- Dual P
- Drain-source On Resistance-Max :
- 0.067 Ω
- Rds On Max :
- 67 mΩ
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 4.7A
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Rise Time :
- 10.6 ns
- Drain to Source Voltage (Vdss) :
- 20 V
- Voltage Rating (DC) :
- -20 V
- Drain to Source Breakdown Voltage :
- -20 V
- Number of Terminals :
- 8
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Status :
- Active
- Input Capacitance :
- 920 pF
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 20 V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Compliant
- Vgs(th) (Max) @ Id :
- 1.2V @ 25µA
- Number of Elements :
- 2
- JESD-30 Code :
- R-PDSO-G8
- Drain to Source Resistance :
- 67 mΩ
- Supplier Device Package :
- PG-DSO-8
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 15V
- Turn-Off Delay Time :
- 26.3 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel
- Current Rating :
- -4.7 A
- FET Type :
- 2 P-Channel (Dual)
- Manufacturer :
- Rochester Electronics LLC
- Transistor Application :
- SWITCHING
- Min Operating Temperature :
- -55 °C
- Polarity/Channel Type :
- P-Channel
- Package :
- Bulk
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 28 mJ
- Max Power Dissipation :
- 2 W
- Power Dissipation :
- 2 W
- Max Operating Temperature :
- 150 °C
- Pulsed Drain Current-Max (IDM) :
- 18.8 A
- Datasheets
- BSO211P

2 P-Channel (Dual) Tape & Reel 67mOhm @ 4.7A, 4.5V 920pF @ 15V 23.9nC @ 4.5V 20 V 8-SOIC (0.154, 3.90mm Width)
BSO211P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 28 mJ.A device's maximal input capacitance is 920pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.7 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 18.8 A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 67 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20 V.This transistor requires a 20 V drain to source voltage (Vdss).
BSO211P Features
the avalanche energy rating (Eas) is 28 mJ
a continuous drain current (ID) of 4.7 A
a drain-to-source breakdown voltage of -20 V voltage
the turn-off delay time is 26.3 ns
based on its rated peak drain current 18.8 A.
single MOSFETs transistor is 67 mΩ
a 20 V drain to source voltage (Vdss)
BSO211P Applications
There are a lot of Infineon
BSO211P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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