BSO211P

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Mfr.Part #
BSO211P
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
P-CHANNEL POWER MOSFET
Stock
20,000
In Stock :
20,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Arrays
Gate to Source Voltage (Vgs) :
12 V
Pin Count :
8
Terminal Finish :
NOT SPECIFIED
Qualification Status :
COMMERCIAL
Series :
OptiMOS™
Continuous Drain Current (ID) :
4.7 A
Operating Temperature :
-55°C ~ 150°C (TJ)
Pbfree Code :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
67mOhm @ 4.7A, 4.5V
Power - Max :
2W
Gate Charge (Qg) (Max) @ Vgs :
23.9nC @ 4.5V
Mounting Type :
Surface Mount
Turn-On Delay Time :
7.8 ns
FET Feature :
Logic Level Gate
Surface Mount :
yes
Package Shape :
RECTANGULAR
Channel Type :
Dual P
Drain-source On Resistance-Max :
0.067 Ω
Rds On Max :
67 mΩ
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
4.7A
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Number of Pins :
8
Rise Time :
10.6 ns
Drain to Source Voltage (Vdss) :
20 V
Voltage Rating (DC) :
-20 V
Drain to Source Breakdown Voltage :
-20 V
Number of Terminals :
8
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Input Capacitance :
920 pF
Reach Compliance Code :
Unknown
DS Breakdown Voltage-Min :
20 V
Operating Mode :
ENHANCEMENT MODE
RoHS :
Compliant
Vgs(th) (Max) @ Id :
1.2V @ 25µA
Number of Elements :
2
JESD-30 Code :
R-PDSO-G8
Drain to Source Resistance :
67 mΩ
Supplier Device Package :
PG-DSO-8
Input Capacitance (Ciss) (Max) @ Vds :
920pF @ 15V
Turn-Off Delay Time :
26.3 ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Terminal Position :
Dual
Packaging :
Tape and Reel
Current Rating :
-4.7 A
FET Type :
2 P-Channel (Dual)
Manufacturer :
Rochester Electronics LLC
Transistor Application :
SWITCHING
Min Operating Temperature :
-55 °C
Polarity/Channel Type :
P-Channel
Package :
Bulk
Configuration :
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
28 mJ
Max Power Dissipation :
2 W
Power Dissipation :
2 W
Max Operating Temperature :
150 °C
Pulsed Drain Current-Max (IDM) :
18.8 A
Datasheets
BSO211P
Introducing Transistors - FETs, MOSFETs - Arrays Infineon Technologies BSO211P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), BSO211P pinout, BSO211P datasheet PDF, BSO211P amp .Beyond Transistors - FETs, MOSFETs - Arrays Infineon Technologies BSO211P ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSO211P


2 P-Channel (Dual) Tape & Reel 67mOhm @ 4.7A, 4.5V 920pF @ 15V 23.9nC @ 4.5V 20 V 8-SOIC (0.154, 3.90mm Width)

BSO211P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 28 mJ.A device's maximal input capacitance is 920pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.7 A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20 V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 18.8 A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 67 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12 V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20 V.This transistor requires a 20 V drain to source voltage (Vdss).

BSO211P Features


the avalanche energy rating (Eas) is 28 mJ
a continuous drain current (ID) of 4.7 A
a drain-to-source breakdown voltage of -20 V voltage
the turn-off delay time is 26.3 ns
based on its rated peak drain current 18.8 A.
single MOSFETs transistor is 67 mΩ
a 20 V drain to source voltage (Vdss)


BSO211P Applications


There are a lot of Infineon
BSO211P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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