BSO207PNTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Number of Terminations :

8

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

5.7A

Drain-source On Resistance-Max :

0.045Ohm

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Number of Pins :

8

Power - Max :

2W

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1013pF @ 15V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Base Part Number :

BSO207

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2001

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

44 mJ

Number of Elements :

2

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 4.5V

Vgs(th) (Max) @ Id :

1.2V @ 40μA

RoHS Status :

Non-RoHS Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

45m Ω @ 5.7A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

DS Breakdown Voltage-Min :

20V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED