BSL315PL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

150m Ω @ 1.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

1.5A

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.15Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Additional Feature :

AVALANCHE RATED

Feedback Cap-Max (Crss) :

84 pF

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 11μA

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Surface Mount :

yes

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

282pF @ 15V

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Base Part Number :

BSL315

Current - Continuous Drain (Id) @ 25°C :

1.5A

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6

Power - Max :

500mW

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Transistor Element Material :

SILICON

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 5V

Series :

OptiMOS™

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)