BSL214NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Mount :

Surface Mount

Power - Max :

500mW

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Max Power Dissipation :

500mW

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.14Ohm

Vgs(th) (Max) @ Id :

1.2V @ 3.7µA

Continuous Drain Current (ID) :

1.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

12V

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate, 2.5V Drive

Input Capacitance (Ciss) (Max) @ Vds :

143pF @ 10V

Rise Time :

7.6ns

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 5V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Feedback Cap-Max (Crss) :

9 pF

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.5A, 4.5V

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

20V

Transistor Element Material :

SILICON