BSL211SPL6327

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Mfr.Part #
BSL211SPL6327
Manufacturer
Infineon Technologies
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
P-CHANNEL POWER MOSFET
Stock
24,046
In Stock :
24,046

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
6
Terminal Form :
Gull wing
Qualification Status :
Not Qualified
Number of Terminals :
6
Rds On (Max) @ Id, Vgs :
67mOhm @ 4.7A, 4.5V
Polarity/Channel Type :
P-Channel
Operating Mode :
ENHANCEMENT MODE
FET Feature :
-
Avalanche Energy Rating (Eas) :
26 mJ
Vgs(th) (Max) @ Id :
1.2V @ 25µA
Vgs (Max) :
±12V
REACH SVHC :
No SVHC
Gate Charge (Qg) (Max) @ Vgs :
12.4 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C :
4.7A (Ta)
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
ECCN Code :
EAR99
RoHS :
Compliant
DS Breakdown Voltage-Min :
20 V
Terminal Position :
Dual
Turn-Off Delay Time :
25 ns
Package :
Bulk
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
12 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Min Operating Temperature :
-55 °C
Drain to Source Voltage (Vdss) :
20 V
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Surface Mount :
yes
Number of Pins :
6
Manufacturer :
Infineon Technologies AG
Subcategory :
Other Transistors
FET Type :
P-Channel
Power Dissipation (Max) :
2W (Ta)
Current Rating :
-4.7 A
Supplier Device Package :
PG-TSOP6-6-6
Continuous Drain Current (ID) :
4.7 A
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Lead Free :
Lead Free
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
2 W
Pulsed Drain Current-Max (IDM) :
18.8 A
Rds On Max :
67 mΩ
Drain Current-Max (Abs) (ID) :
4.7 A
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Nominal Vgs :
-900 mV
Input Capacitance :
654 pF
Max Power Dissipation :
2 W
Drain to Source Resistance :
67 mΩ
Drain to Source Breakdown Voltage :
-20 V
Turn-On Delay Time :
8.7 ns
Technology :
MOSFET (Metal Oxide)
Pbfree Code :
yes
Max Operating Temperature :
150 °C
Drain-source On Resistance-Max :
0.067 Ω
Mounting Type :
Surface Mount
Power Dissipation :
2 W
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C ~ 150°C (TJ)
JESD-30 Code :
R-PDSO-G6
Voltage Rating (DC) :
-20 V
HTS Code :
8541.29.00.95
Series :
OptiMOS™-P
Input Capacitance (Ciss) (Max) @ Vds :
654 pF @ 15 V
Product Status :
Active
Rise Time :
13.9 ns
Datasheets
BSL211SPL6327
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSL211SPL6327 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), BSL211SPL6327 pinout, BSL211SPL6327 datasheet PDF, BSL211SPL6327 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSL211SPL6327 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSL211SPL6327


MOSFET (Metal Oxide) P-Channel 67mOhm @ 4.7A, 4.5V ±12V 654 pF @ 15 V 12.4 nC @ 4.5 V 20 V SOT-23-6 Thin, TSOT-23-6

BSL211SPL6327 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 26 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 654 pF @ 15 V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -20 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -20 V.There is no drain current on this device since the maximum continuous current it can conduct is 4.7 A.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 18.8 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 67 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 12 VV.In order for DS breakdown voltage to remain above 20 V, it should remain above the 20 V level.The transistor must receive a 20 V drain to source voltage (Vdss) in order to function.

BSL211SPL6327 Features


the avalanche energy rating (Eas) is 26 mJ
a continuous drain current (ID) of 4.7 A
a drain-to-source breakdown voltage of -20 V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 18.8 A.
single MOSFETs transistor is 67 mΩ
a 20 V drain to source voltage (Vdss)


BSL211SPL6327 Applications


There are a lot of Infineon
BSL211SPL6327 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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