BSL207SPL6327HTSA1
- Mfr.Part #
- BSL207SPL6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6A TSOP-6
- Stock
- 4,587
- In Stock :
- 4,587
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 20V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 44 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Power Dissipation-Max :
- 2W Ta
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 6A, 4.5V
- Rise Time :
- 17ns
- Drain Current-Max (Abs) (ID) :
- 6A
- Pulsed Drain Current-Max (IDM) :
- 24A
- Number of Terminations :
- 6
- Vgs (Max) :
- ±12V
- Turn On Delay Time :
- 9 ns
- Fall Time (Typ) :
- 53 ns
- Power Dissipation :
- 2W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1007pF @ 15V
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- ECCN Code :
- EAR99
- Published :
- 2001
- Turn-Off Delay Time :
- 42 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 1.2V @ 40μA
- Current - Continuous Drain (Id) @ 25°C :
- 6A Ta
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 20V
- Mounting Type :
- Surface Mount
- Series :
- OptiMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 12V
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- 6A
- Number of Pins :
- 6
- Datasheets
- BSL207SPL6327HTSA1

P-Channel Tape & Reel (TR) 41m Ω @ 6A, 4.5V ±12V 1007pF @ 15V 20nC @ 4.5V 20V SOT-23-6 Thin, TSOT-23-6
BSL207SPL6327HTSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 44 mJ.A device's maximal input capacitance is 1007pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 6A, which represents the maximum continuous current it can conduct.In this device, the drain current is 6A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.5V 4.5V).
BSL207SPL6327HTSA1 Features
the avalanche energy rating (Eas) is 44 mJ
a continuous drain current (ID) of 6A
the turn-off delay time is 42 ns
based on its rated peak drain current 24A.
a 20V drain to source voltage (Vdss)
BSL207SPL6327HTSA1 Applications
There are a lot of Infineon Technologies
BSL207SPL6327HTSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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