BSL211SPL6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

4.7A

Vgs(th) (Max) @ Id :

1.2V @ 25µA

DS Breakdown Voltage-Min :

20V

Power Dissipation :

2W

Lead Free :

Lead Free

Number of Pins :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Pbfree Code :

yes

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

20V

Reach Compliance Code :

Unknown

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 4.5V

Number of Elements :

1

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

654pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rise Time :

13.9ns

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

25 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.7A, 4.5V

Fall Time (Typ) :

23.3 ns

Number of Terminations :

6

Power Dissipation-Max :

2W Ta

Published :

2001

Vgs (Max) :

±12V

ECCN Code :

EAR99

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

8.7 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta