BSL211SP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.067Ohm

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

1.2V @ 25µA

Surface Mount :

yes

Pin Count :

6

JESD-30 Code :

R-PDSO-G6

Pbfree Code :

yes

Published :

2001

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12.4nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

18.8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

FET Type :

P-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

2W Ta

Drain Current-Max (Abs) (ID) :

4.7A

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

20V

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.7A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

654pF @ 15V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Avalanche Energy Rating (Eas) :

26 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Series :

OptiMOS™

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

4.7A Ta