BSD235N L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

350m Ω @ 950mA, 4.5V

Surface Mount :

yes

Package / Case :

6-VSSOP, SC-88, SOT-363

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

0.5W

Peak Reflow Temperature (Cel) :

260

Base Part Number :

BSD235

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Input Capacitance (Ciss) (Max) @ Vds :

63pF @ 10V

Terminal Finish :

MATTE TIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.35Ohm

Power - Max :

500mW

JESD-30 Code :

R-PDSO-G6

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

0.32nC @ 4.5V

JESD-609 Code :

e3

Number of Elements :

2

FET Type :

2 N-Channel (Dual)

HTS Code :

8541.21.00.95

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Published :

2011

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.2V @ 1.6μA

Reach Compliance Code :

Compliant

Pin Count :

6

Drain Current-Max (Abs) (ID) :

0.95A

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

950mA

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

6