BSD235N L6327
- Mfr.Part #
- BSD235N L6327
- Manufacturer
- Infineon Technologies
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 0.95A SOT363
- Stock
- 1,457
- In Stock :
- 1,457
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- Logic Level Gate
- Reach Compliance Code :
- Compliant
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 950mA, 4.5V
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 20V
- Power - Max :
- 500mW
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.35Ohm
- Power Dissipation-Max (Abs) :
- 0.5W
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 950mA
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- MATTE TIN
- Published :
- 2011
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 6
- Gate Charge (Qg) (Max) @ Vgs :
- 0.32nC @ 4.5V
- HTS Code :
- 8541.21.00.95
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DS Breakdown Voltage-Min :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 63pF @ 10V
- Package / Case :
- 6-VSSOP, SC-88, SOT-363
- Series :
- OptiMOS™
- FET Type :
- 2 N-Channel (Dual)
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BSD235
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 1.2V @ 1.6μA
- JESD-30 Code :
- R-PDSO-G6
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 2
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 0.95A
- Configuration :
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Datasheets
- BSD235N L6327
BSD235N L6327 Documents

BSD235N L6327 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at
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