BSD223P L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

0.62nC @ 4.5V

Pin Count :

6

Number of Elements :

2

Base Part Number :

BSD223

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

2 P-Channel (Dual)

Power Dissipation-Max (Abs) :

0.25W

Transistor Element Material :

SILICON

Power - Max :

250mW

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

56pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 390mA, 4.5V

Feedback Cap-Max (Crss) :

22 pF

Number of Terminations :

6

Vgs(th) (Max) @ Id :

1.2V @ 1.5μA

Drain Current-Max (Abs) (ID) :

0.39A

JESD-30 Code :

R-PDSO-G6

Current - Continuous Drain (Id) @ 25°C :

390mA

Reach Compliance Code :

Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

6-VSSOP, SC-88, SOT-363

HTS Code :

8541.21.00.95

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Published :

2002

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

20V

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Surface Mount :

yes

RoHS Status :

RoHS Compliant