BSD235NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

4.5 ns

Number of Elements :

2

Rise Time :

3.6ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

63pF @ 10V

Continuous Drain Current (ID) :

950mA

Mount :

Surface Mount

Length :

2mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

JESD-609 Code :

e3

Power Dissipation :

500mW

Max Junction Temperature (Tj) :

150°C

Drain Current-Max (Abs) (ID) :

0.95A

Pbfree Code :

yes

Base Part Number :

BSD235

Threshold Voltage :

700mV

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

0.32nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Published :

2013

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Height :

1mm

Factory Lead Time :

10 Weeks

Drain-source On Resistance-Max :

0.35Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Max Power Dissipation :

500mW

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

350m Ω @ 950mA, 4.5V

Width :

1.25mm

Package / Case :

6-VSSOP, SC-88, SOT-363

Terminal Form :

Gull wing

Turn On Delay Time :

3.8 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.2V @ 1.6μA

Additional Feature :

AVALANCHE RATED