BSD223P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

HTS Code :

8541.21.00.95

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.39A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

56pF @ 15V

Number of Terminations :

6

Published :

2002

Feedback Cap-Max (Crss) :

22 pF

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

250mW

JESD-30 Code :

R-PDSO-G6

DS Breakdown Voltage-Min :

20V

Transistor Element Material :

SILICON

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

0.62nC @ 4.5V

Power Dissipation-Max (Abs) :

0.25W

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 390mA, 4.5V

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

6-VSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.2V @ 1.5μA

Pin Count :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Number of Elements :

1

FET Type :

2 P-Channel (Dual)

Base Part Number :

BSD223

Current - Continuous Drain (Id) @ 25°C :

390mA