BSC889N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 30A, 10V

Package / Case :

8-PowerTDFN

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

12A

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta 28W Tc

Current - Continuous Drain (Id) @ 25°C :

12A Ta 44A Tc

Fall Time (Typ) :

5 ns

Published :

2011

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Rise Time :

4.2ns

Series :

OptiMOS™

Number of Terminations :

5

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7.7 ns

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2.5W

Turn-Off Delay Time :

7.2 ns

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Radiation Hardening :

No

JESD-30 Code :

R-PDSO-N5

Mount :

Surface Mount