BSC883N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Surface Mount :

yes

Subcategory :

FET General Purpose Power

Continuous Drain Current Id :

19

FET Feature :

-

Drain-source On Resistance-Max :

0.0046 Ω

Avalanche Energy Rating (Eas) :

40 mJ

Package :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

98 A

Current - Continuous Drain (Id) @ 25°C :

19A (Ta), 98A (Tc)

Supplier Device Package :

PG-TDSON-8

Package / Case :

8-PowerTDFN

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

OptiMOS™3M

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

2.5W (Ta), 57W (Tc)

Vgs(th) (Max) @ Id :

2V @ 250μA

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Channel Type :

N

Transistor Application :

SWITCHING

Number of Elements :

1

Manufacturer :

Infineon Technologies AG

Drain to Source Voltage (Vdss) :

34 V

Technology :

MOSFET (Metal Oxide)

Terminal Position :

Dual

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Power Dissipation-Max (Abs) :

57 W

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 15 V

Polarity/Channel Type :

N-Channel

Pin Count :

8

Product Status :

Active

Number of Terminals :

5

FET Type :

N-Channel

ECCN Code :

EAR99

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

3.8mOhm @ 30A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Pulsed Drain Current-Max (IDM) :

392 A

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F5

DS Breakdown Voltage-Min :

34 V

Vgs (Max) :

±20V