BSC886N03LSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Drain-source On Resistance-Max :

0.0092Ohm

Turn-Off Delay Time :

18 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

JESD-30 Code :

R-PDSO-N5

Factory Lead Time :

26 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

3 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

13A Ta 65A Tc

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 39W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

5

Turn On Delay Time :

4.2 ns

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

65A

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Threshold Voltage :

2.2V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

20 mJ

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Published :

2011

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Rise Time :

3.2ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

260A

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.2V @ 250µA

DS Breakdown Voltage-Min :

30V

Vgs (Max) :

±20V

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant