BSC883N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

17A

Continuous Drain Current (ID) :

98A

Rise Time :

4.4ns

DS Breakdown Voltage-Min :

34V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Series :

OptiMOS™

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

4 ns

Published :

2011

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Number of Terminations :

5

Number of Pins :

8

JESD-30 Code :

R-PDSO-F5

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Position :

Dual

REACH SVHC :

No SVHC

Terminal Form :

Flat

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

17A Ta 98A Tc

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Power Dissipation-Max :

2.5W Ta 57W Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

392A

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

26 ns

Threshold Voltage :

2.2V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

34V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

50 mJ

Factory Lead Time :

39 Weeks

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

6.4 ns