BSC883N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Mounting Type :

Surface Mount

Published :

2011

Continuous Drain Current (ID) :

98A

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Vgs (Max) :

±20V

Factory Lead Time :

39 Weeks

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

34V

Series :

OptiMOS™

JESD-30 Code :

R-PDSO-F5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 57W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

50 mJ

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Number of Terminations :

5

Fall Time (Typ) :

4 ns

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

392A

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

26 ns

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

34V

Rise Time :

4.4ns

Drain Current-Max (Abs) (ID) :

17A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 15V

Turn On Delay Time :

6.4 ns

Threshold Voltage :

2.2V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

17A Ta 98A Tc