BSC883N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

DS Breakdown Voltage-Min :

34V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

19A Ta 98A Tc

Drain to Source Voltage (Vdss) :

34V

Avalanche Energy Rating (Eas) :

40 mJ

JESD-30 Code :

R-PDSO-F5

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

19A

Turn-Off Delay Time :

19 ns

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

392A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta 57W Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Number of Elements :

1

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

Rise Time :

7.6ns

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0046Ohm

Power Dissipation :

2.5W

Published :

2000

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V