BSC882N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

34V

Drain to Source Voltage (Vdss) :

34V

Number of Terminations :

5

Radiation Hardening :

No

Turn-Off Delay Time :

24 ns

Packaging :

Tape and Reel (TR)

Rise Time :

9ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

75 mJ

Mount :

Surface Mount

Power Dissipation-Max :

2.5W Ta 69W Tc

Fall Time (Typ) :

9.4 ns

Number of Elements :

1

Continuous Drain Current (ID) :

22A

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-F5

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0033Ohm

Package / Case :

8-PowerTDFN

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

18 ns

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Vgs (Max) :

±20V

Published :

2010

Terminal Form :

Flat

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

22A Ta 100A Tc

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

RoHS Status :

RoHS Compliant

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation :

2.5W

Pulsed Drain Current-Max (IDM) :

400A

Gate to Source Voltage (Vgs) :

20V