BSC886N03LS G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

JESD-30 Code :

R-PDSO-N5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

260A

DS Breakdown Voltage-Min :

30V

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

4.2 ns

Rise Time :

3.2ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Factory Lead Time :

26 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

2.2V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

65A

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Terminal Form :

NO LEAD

Avalanche Energy Rating (Eas) :

20 mJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 39W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Case Connection :

DRAIN

Turn-Off Delay Time :

18 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0092Ohm

Terminal Position :

Dual

Fall Time (Typ) :

3 ns

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

13A Ta 65A Tc

Transistor Application :

SWITCHING

Power Dissipation :

2.5W