BSC889N03MSG

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Mfr.Part #
BSC889N03MSG
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
5,000
In Stock :
5,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Drain to Source Breakdown Voltage :
30 V
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
176 A
Number of Pins :
8
Supplier Device Package :
PG-TSDSON-8
Polarity/Channel Type :
N-Channel
Terminal Position :
Dual
Package :
Bulk
FET Type :
N-Channel
Rds On Max :
3.5 Ω
Continuous Drain Current (ID) :
280 mA
Power Dissipation :
2.5 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Technology :
MOSFET (Metal Oxide)
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
2.5W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss) :
60 V
Channel Type :
N
Transistor Element Material :
SILICON
Max Operating Temperature :
150 °C
Manufacturer :
Infineon Technologies AG
Pin Count :
8
FET Feature :
-
Turn-Off Delay Time :
7.2 ns
JESD-30 Code :
R-PDSO-N5
Vgs(th) (Max) @ Id :
2V @ 250μA
Input Capacitance :
43 pF
Max Power Dissipation :
500 mW
Subcategory :
FET General Purpose Power
Product Status :
Active
Number of Terminals :
5
Drain Current-Max (Abs) (ID) :
44 A
Package Shape :
RECTANGULAR
Operating Temperature :
-55°C ~ 150°C (TJ)
ECCN Code :
EAR99
Vgs (Max) :
±20V
Drain to Source Resistance :
9.1 mΩ
Pbfree Code :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
9.1mOhm @ 30A, 10V
Gate to Source Voltage (Vgs) :
20 V
Mount :
Surface Mount
Terminal Form :
NO LEAD
Power Dissipation-Max (Abs) :
28 W
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 44A (Tc)
DS Breakdown Voltage-Min :
30 V
Drain-source On Resistance-Max :
0.0091 Ω
Min Operating Temperature :
-55 °C
Rise Time :
4.2 ns
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
1500 pF @ 15 V
Package / Case :
8-PowerTDFN
Continuous Drain Current Id :
12
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
20 nC @ 10 V
Avalanche Energy Rating (Eas) :
10 mJ
Qualification Status :
Not Qualified
Number of Elements :
1
Transistor Application :
SWITCHING
Series :
OptiMOS™ 3
Reach Compliance Code :
Compliant
Case Connection :
DRAIN
RoHS :
Compliant
Mounting Type :
Surface Mount
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC889N03MSG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, BSC889N03MSG pinout, BSC889N03MSG datasheet PDF, BSC889N03MSG amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC889N03MSG ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC889N03MSG


BSC889N03MSG datasheet pdf and Unclassified product details from Infineon stock available at

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