BSC889N03MSG
- Mfr.Part #
- BSC889N03MSG
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Drain to Source Breakdown Voltage :
- 30 V
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 176 A
- Number of Pins :
- 8
- Supplier Device Package :
- PG-TSDSON-8
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Dual
- Package :
- Bulk
- FET Type :
- N-Channel
- Rds On Max :
- 3.5 Ω
- Continuous Drain Current (ID) :
- 280 mA
- Power Dissipation :
- 2.5 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Technology :
- MOSFET (Metal Oxide)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 2.5W (Ta), 28W (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Channel Type :
- N
- Transistor Element Material :
- SILICON
- Max Operating Temperature :
- 150 °C
- Manufacturer :
- Infineon Technologies AG
- Pin Count :
- 8
- FET Feature :
- -
- Turn-Off Delay Time :
- 7.2 ns
- JESD-30 Code :
- R-PDSO-N5
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Input Capacitance :
- 43 pF
- Max Power Dissipation :
- 500 mW
- Subcategory :
- FET General Purpose Power
- Product Status :
- Active
- Number of Terminals :
- 5
- Drain Current-Max (Abs) (ID) :
- 44 A
- Package Shape :
- RECTANGULAR
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 9.1 mΩ
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 9.1mOhm @ 30A, 10V
- Gate to Source Voltage (Vgs) :
- 20 V
- Mount :
- Surface Mount
- Terminal Form :
- NO LEAD
- Power Dissipation-Max (Abs) :
- 28 W
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Ta), 44A (Tc)
- DS Breakdown Voltage-Min :
- 30 V
- Drain-source On Resistance-Max :
- 0.0091 Ω
- Min Operating Temperature :
- -55 °C
- Rise Time :
- 4.2 ns
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500 pF @ 15 V
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current Id :
- 12
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 20 nC @ 10 V
- Avalanche Energy Rating (Eas) :
- 10 mJ
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Series :
- OptiMOS™ 3
- Reach Compliance Code :
- Compliant
- Case Connection :
- DRAIN
- RoHS :
- Compliant
- Mounting Type :
- Surface Mount
- Datasheets
- BSC889N03MSG
BSC889N03MSG Documents

BSC889N03MSG datasheet pdf and Unclassified product details from Infineon stock available at
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