BSC889N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 44A (Tc)

Turn-Off Delay Time :

7.2 ns

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Continuous Drain Current Id :

12

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 30A, 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 15 V

Power Dissipation :

2.5 W

Input Capacitance :

43 pF

Drain Current-Max (Abs) (ID) :

44 A

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Terminals :

5

Pbfree Code :

yes

ECCN Code :

EAR99

Continuous Drain Current (ID) :

280 mA

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

60 V

Min Operating Temperature :

-55 °C

FET Type :

N-Channel

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

176 A

Power Dissipation (Max) :

2.5W (Ta), 28W (Tc)

Rise Time :

4.2 ns

Max Operating Temperature :

150 °C

Manufacturer :

Infineon Technologies AG

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

28 W

Series :

OptiMOS™ 3

Channel Type :

N

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-N5

Subcategory :

FET General Purpose Power

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

PG-TSDSON-8

Gate to Source Voltage (Vgs) :

20 V

Avalanche Energy Rating (Eas) :

10 mJ

Technology :

MOSFET (Metal Oxide)

Drain-source On Resistance-Max :

0.0091 Ω

Vgs (Max) :

±20V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30 V

Case Connection :

DRAIN

Rds On Max :

3.5 Ω

FET Feature :

-

Surface Mount :

yes

Product Status :

Active

Pin Count :

8

Drain to Source Resistance :

9.1 mΩ

Max Power Dissipation :

500 mW

Number of Pins :

8

DS Breakdown Voltage-Min :

30 V

Reach Compliance Code :

Compliant