BSC889N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

2.5W (Ta), 28W (Tc)

FET Feature :

-

Mounting Type :

Surface Mount

Technology :

MOSFET (Metal Oxide)

Package / Case :

8-PowerTDFN

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Terminal Position :

Dual

ECCN Code :

EAR99

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Supplier Device Package :

PG-TDSON-8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Terminal Form :

Flat

Channel Type :

N

Package Shape :

RECTANGULAR

Number of Terminals :

5

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

28 W

Avalanche Energy Rating (Eas) :

10 mJ

Product Status :

Active

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

45 A

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

180 A

Vgs (Max) :

±20V

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

13A (Ta), 45A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Series :

OptiMOS™ 3

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Pin Count :

8

Rds On (Max) @ Id, Vgs :

9mOhm @ 30A, 10V

Subcategory :

FET General Purpose Power

DS Breakdown Voltage-Min :

30 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Manufacturer :

Infineon Technologies AG

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain-source On Resistance-Max :

0.009 Ω

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 15 V

Continuous Drain Current Id :

13